VCSELs emitting in the 1310-nm waveband for novel optical communication applications

Alexei Syrbu; Vladimir Iakovlev; Grigore Suruceanu; Andrei Caliman; Alexandru Mereuta; Andrei Mircea; Claude-Albert Berseth; Eckard Diechsel; Julien Boucart; Alok Rudra; Eli Kapon

doi:10.1117/12.606964

14 March 2005 VCSELs emitting in the 1310-nm waveband for novel optical communication applications

Alexei Syrbu, Vladimir Iakovlev, Grigore Suruceanu, Andrei Caliman, Alexandru Mereuta, Andrei Mircea, Claude-Albert Berseth, Eckard Diechsel, Julien Boucart, Alok Rudra, Eli Kapon

Author Affiliations +

Proceedings Volume 5737, Vertical-Cavity Surface-Emitting Lasers IX; (2005) https://doi.org/10.1117/12.606964
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

High performance vertical cavity surface emitting lasers (VCSELs) emitting in the 1310 nm waveband are fabricated by bonding AlGaAs/GaAs distributed Bragg reflectors (DBRs) on both sides of a InP-based cavity containing 5 InAlGaAs quantum wells using the localized wafer fusion technique. A tunnel junction structure is used to inject carriers into the active region. Devices with 7 μm aperture produce single mode emission with 40 dB side-mode suppression ratio. Maximum single mode output power of 1.7 mW is obtained in the temperature range of 20-70°C. Modulation capability at 3.2 Gb/s is demonstrated both at room temperature and 70°C with rise time and fall time values of eye diagrams bellow 120 ps. Overall device performance complies with the requirements of 10 GBASE-LX4 IEEE.802.3ae standard.

Citation Download Citation

Alexei Syrbu, Vladimir Iakovlev, Grigore Suruceanu, Andrei Caliman, Alexandru Mereuta, Andrei Mircea, Claude-Albert Berseth, Eckard Diechsel, Julien Boucart, Alok Rudra, and Eli Kapon "VCSELs emitting in the 1310-nm waveband for novel optical communication applications", Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); https://doi.org/10.1117/12.606964

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