Paper
13 March 2013 Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high-speed wavelength division multiplexing applications
V. Iakovlev, A. Sirbu, Z. Micković, D. Ellafi, G. Suruceanu, A. Mereuta, A. Caliman, E. Kapon
Author Affiliations +
Abstract
Building coarse wavelength division multiplexing (WDM), 4×10 Gbps VCSEL transmitter modules has the promise for dramatic decreasing power consumption. Over the last years, we have demonstrated continuous improvements of parameters and reliability of wafer fused long-wavelength VCSELs. Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high speed WDM applications are reviewed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Iakovlev, A. Sirbu, Z. Micković, D. Ellafi, G. Suruceanu, A. Mereuta, A. Caliman, and E. Kapon "Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high-speed wavelength division multiplexing applications", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 863904 (13 March 2013); https://doi.org/10.1117/12.2003759
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Cited by 13 scholarly publications and 1 patent.
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KEYWORDS
Vertical cavity surface emitting lasers

Semiconducting wafers

Reliability

Wavelength division multiplexing

Coarse wavelength division multiplexing

Interfaces

Modulation

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