Paper
1 March 1974 A Process Evaluation Of Gaf Microline Photoresist - PR 102
Chris Ladas
Author Affiliations +
Abstract
Increasing demands for minimizing defect density in wafer processing have resulted in a significant emphasis on non-contact printing of the photoresist using either a proximity or projection mode of align-ment. Correspondingly, the need for shrinking geometry sizes to increase packing density and improve device performance is very important in coping with the complexity of LSI devices.
© (1974) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Ladas "A Process Evaluation Of Gaf Microline Photoresist - PR 102", Proc. SPIE 0055, Technological Advances in Micro and Submicro Photofabrication Imagery, (1 March 1974); https://doi.org/10.1117/12.954242
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KEYWORDS
Oxides

Etching

Photoresist materials

Coating

Capacitors

Molybdenum

Phosphorus

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