Paper
28 May 2004 Dry cleaning of fluorocarbon residues by atomic hydrogen flow
E. Anishchenko, V. Diamant, Valerii A. Kagadei, E. Nefeyodtsev, Dmitry I. Proskurovsky, S. Romanenko
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557271
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Successful removal of fluorocarbon residues on silicon structure using neutral atomic hydrogen direct flow is reported. It has been stated that the treatment of samples in atomic hydrogen direct flow of density of 2x1015 at. cm-2 s-1 leads to decreasing of fluorocarbon residues concentration on the surface of structure by 5 orders of magnitude. The concentration of fluorocarbon residues after AH treatment is at the hum level characteristic for the absolutely clean surface exposed in atmosphere air. Removal fluorocarbon residues is being realized at temperature of 20-100 ° both from the planar surface of a structure and from the sidewalls and bottom of the contact holes with diameter of 0.3-0.25 μm and depth of 1.2-1 μm. The time of treatment as 2 min is quite sufficient for fluorocarbon residues removal.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Anishchenko, V. Diamant, Valerii A. Kagadei, E. Nefeyodtsev, Dmitry I. Proskurovsky, and S. Romanenko "Dry cleaning of fluorocarbon residues by atomic hydrogen flow", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557271
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KEYWORDS
Hydrogen

Vacuum ultraviolet

Ions

Polymers

Chemical species

Dielectrics

Photoresist materials

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