Integration using KrF and ArF resist materials in a full via firstdual-damascene process scheme with CVD OSG low-k dielectric

Scott W. Jessen; K. Steiner; Thomas M. Wolf; William D. Josephson; S. Lytle; Mitsuru Sato; Chung Yih Lee; Ming Hui Fan

doi:10.1117/12.474632

30 July 2002 Integration using KrF and ArF resist materials in a full via first dual-damascene process scheme with CVD OSG low-k dielectric

Scott W. Jessen, K. Steiner, Thomas M. Wolf, William D. Josephson, S. Lytle, Mitsuru Sato, Chung Yih Lee, Ming Hui Fan

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474632
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Using a full via first (FVF) dual damascene (DD) scheme for copper processing with low-k dielectrics has presented many new challenges to the semiconductor industry. Among those challenges, for photolithography, resist poisoning at the trench level has been the most daunting. Resist and bottom anti-reflective coating (BARC) screenings for poisoning at the 0.13 micrometers and 0.10 micrometers technology nodes have been performed on a variety of KrF and ArF resist and BARC platforms using a simple semi-qualitative method. By varying resist parameters such as resin, photoacid generator (PAG), and solvent types, a lithographically suitable KrF resist is found for the 0.13 micrometers node with minimal sensitivity to poisoning. In addition, ArF resists and BARCs were screened for their sensitivity to poisoning for the 0.10 micrometers node. Suitable resist and BARC candidates are identified for preliminary use for the 0.10 micrometers node.

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Scott W. Jessen, K. Steiner, Thomas M. Wolf, William D. Josephson, S. Lytle, Mitsuru Sato, Chung Yih Lee, and Ming Hui Fan "Integration using KrF and ArF resist materials in a full via first dual-damascene process scheme with CVD OSG low-k dielectric", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474632

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