Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist

Jung-Woo Kim; Eun-Kyung Son; Sang-Hyang Lee; Deogbae Kim; Jaehyun Kim; Geunsu Lee; Jae Chang Jung; Cheol Kyu Bok; Seung Chan Moon; Ki Soo Shin

doi:10.1117/12.534675

14 May 2004 Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist

Jung-Woo Kim, Eun-Kyung Son, Sang-Hyang Lee, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Jae Chang Jung, Cheol Kyu Bok, Seung Chan Moon, Ki Soo Shin

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534675
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Sensitivity and resolution capability of photoresist depend on various parameters, such as efficiency of photoacid generation, base strength, types and concentration of protection groups on a polymer, as well as lithographic process condition. We have prepared polymers containing different protecting groups and investigated their effects on the sensitivity, and eventually, on ArF resist photolithographic behavior. Also, several different photoacid generators (PAGs) and bases were employed to study the influence of them on the resist sensitivity. We have changed process condition, especially, bake condition to discuss the role of bake temperature on the photochemical efficiency of the resist. It was found that the diffusion of the photogenerated acid and bases is the most significant factor to determine resist sensitivity than others. The detailed results will be discussed in this paper.

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Jung-Woo Kim, Eun-Kyung Son, Sang-Hyang Lee, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Jae Chang Jung, Cheol Kyu Bok, Seung Chan Moon, and Ki Soo Shin "Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534675

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