Paper
19 March 2012 Reduced Zeta potential through use of cationic adhesion promoter for improved resist process performance and minimizing material consumption
Lorna Hodgson, Andrew Thompson
Author Affiliations +
Abstract
This paper presents the results of a non-HMDS (non-silane) adhesion promoter that was used to reduce the zeta potential for very thin (proprietary) polymer on silicon. By reducing the zeta potential, as measured by the minimum sample required to fully coat a wafer, the amount of polymer required to coat silicon substrates was significantly reduced in the manufacture of X-ray windows used for high transmission of low-energy X-rays. Moreover, this approach used aqueous based adhesion promoter described as a cationic surface active agent that has been shown to improve adhesion of photoresists (positive, negative, epoxy [SU8], e-beam and dry film). As well as reducing the amount of polymer required to coat substrates, this aqueous adhesion promoter is nonhazardous, and contains non-volatile solvents.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lorna Hodgson and Andrew Thompson "Reduced Zeta potential through use of cationic adhesion promoter for improved resist process performance and minimizing material consumption", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83251W (19 March 2012); https://doi.org/10.1117/12.917856
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KEYWORDS
Polymers

Photoresist materials

Semiconducting wafers

Silicon

Thin film coatings

Manufacturing

Coating

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