Study of P-type carbon doping on In0.53Ga0.47As, In0.52Al0.2Ga0.28As, and In0.52Al0.48As

J. Yan; G. Ru; Y. Gong; Fow-Sen Choa

doi:10.1117/12.543715

15 December 2003 Study of P-type carbon doping on In_0.53Ga_0.47As, In_0.52Al_0.2Ga_0.28As, and In_0.52Al_0.48As

J. Yan, G. Ru, Y. Gong, Fow-Sen Choa

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543715
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

The incorporation of carbon into In_0.53Ga_0.47As, In_0.52Al_0.48As and In_0.52Al_0.2Ga_0.28As lattice matched to InP was investigated using carbon tetrabromide (CBr₄) as the carbon source in Metalorganic Chemical Vapor Depositions growth. The parameters and growth conditions are optimized to get high p-type doping for photonic device applications. This is among the first few studies on C-doping in InAlAs and InAlGaAs, and the results show that the presence of Al also efficiently helps to obtain high p-type carbon doping.

Citation Download Citation

J. Yan, G. Ru, Y. Gong, and Fow-Sen Choa "Study of P-type carbon doping on In_0.53Ga_0.47As, In_0.52Al_0.2Ga_0.28As, and In_0.52Al_0.48As", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543715

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available