CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N<sub>2</sub> ambient

Baoxue Bo; Xin Gao; Jing Zhang; Hui Li; Yi Qu; Baolin Zhang; Xiaohong Tang

doi:10.1117/12.636018

6 December 2005 CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N₂ ambient

Baoxue Bo, Xin Gao, Jing Zhang, Hui Li, Yi Qu, Baolin Zhang, Xiaohong Tang

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202T (2005) https://doi.org/10.1117/12.636018
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N₂ as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm².

Citation Download Citation

Baoxue Bo, Xin Gao, Jing Zhang, Hui Li, Yi Qu, Baolin Zhang, and Xiaohong Tang "CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N₂ ambient", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202T (6 December 2005); https://doi.org/10.1117/12.636018

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