Exposure contrast of an EUV mask

Morio Hosoya; Tsutomu Shoki; Takeru Kinoshita; Noriyuki Sakaya; Osamu Nagarekawa

doi:10.1117/12.504072

28 August 2003 Study on exposure contrast of an EUV mask

Morio Hosoya, Tsutomu Shoki, Takeru Kinoshita, Noriyuki Sakaya, Osamu Nagarekawa

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504072
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

The exposure contrast (at wavelength contrast) on an extreme ultraviolet (EUV) mask has been evaluated by an experimental reflectivity measurement and an optical simulation. The experimental contrast showed good agreement with the calculated one for an EUV mask blank with TaBN absorber. The exposure contrast could be precisely estimated for an EUV mask using the simulation. Further, this simulation was used to evaluate the impact of absorber materials (TaBN, Cr and CrN) and 50-nm-thick buffer layers (CrX, SiO2, Ru and C) used to achieve thinner absorber stack. A mask composed of the TaBN absorber and the Cr-based buffer layer showed was the thinnest to achieve thinner absorber stack. A mask composed of the TaBN absorber and the Cr-based buffer layer showed was the thinnest to achieve a contrast of 100, at 81.3-nm. The TaBN absorber and the Cr-based buffer layer were found to be more suitable materials for obtaining lower aspect ratio.

Citation Download Citation

Morio Hosoya, Tsutomu Shoki, Takeru Kinoshita, Noriyuki Sakaya, and Osamu Nagarekawa "Study on exposure contrast of an EUV mask", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504072

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