200-mm EPL stencil mask fabrication by using SOI substrate

Hiroshi Sugimura; Hideyuki Eguchi; Takashi Yoshii; Akira Tamura

doi:10.1117/12.504246

28 August 2003 200-mm EPL stencil mask fabrication by using SOI substrate

Hiroshi Sugimura, Hideyuki Eguchi, Takashi Yoshii, Akira Tamura

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504246
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

We developed 200-mm stencil masks for electron projection lithography (EPL) by using silicon-on-insulator (SOI) substrates. Stress of a 2-μm-thick single crystalline silicon membrane, where patterns were fabricated as openings, was controlled around 10 MPa by adjusting concentration of impurities doped into the SOI layer. Boron and phosphorus were investigated as doping impurities, and it was confirmed that doping both elements were capable of stress control. For forming struts that supported the thin membrane, a time multiplexed etch method was applied. Control of the deep etch parameters made it possible for the SiO₂ stopper layer not to be etched through even if its thickness was sub-microns. To fabricate pattern openings in the membrane, reactive ion etching with high-density plasma was applied and lines down to 140 nm was fabricated in a 200-mm mask. Image placement distortion within a subfield was measured across the 200-mm mask and magnitudes of the image placement distortion were typically ~15 nm (3σ). A 200-mm EPL stencil mask having Selete's actual 70-nm design-rule system on chip (SoC) device pattern was successfully fabricated. We confirmed that the SOI substrates had potential abilities as initial material for 200-mm stencil mask fabrication.

Citation Download Citation

Hiroshi Sugimura, Hideyuki Eguchi, Takashi Yoshii, and Akira Tamura "200-mm EPL stencil mask fabrication by using SOI substrate", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504246

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available