Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Bo Monemar; Plamen P. Paskov; H. Haratizadeh; Galina R. Pozina; J. P. Bergman; Satoshi Kamiyama; Motoaki Iwaya; Hiroshi Amano; Isamu Akasaki

doi:10.1117/12.511285

11 June 2003 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Bo Monemar, Plamen P. Paskov, H. Haratizadeh, Galina R. Pozina, J. P. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511285
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We report on low temperature photoluminescence (PL) in In_xGa_1-xN multiple qunatum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In_0.01Ga_0.99N. One sample with 3 QWs of width 3.5 nm and barriers of width 10.5 nm had the MQW in the depletion region of the outer surface. Two PL peaks were observed, one QW exciton from the QW closest to the GaN buffer, one lower energy peak related to a 2DEG at the interface to the GaN buffer layer. In a second similar sample 5 QWs of width 3 nm and with 6 nm highly Si doped In_0.01Ga_0.99N barriers the MQW was placed in the n-side depletion region of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for n-doped Al_0.07Ga_0.93N/GaN structures, with near surface MQWs.

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Bo Monemar, Plamen P. Paskov, H. Haratizadeh, Galina R. Pozina, J. P. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, and Isamu Akasaki "Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511285

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