Paper
13 March 2015 Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs
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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93630J (2015) https://doi.org/10.1117/12.2076207
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Rosales, Bernard Gil, Morteza Monavarian, Fan Zhang, Serdal Okur, Natalia Izyumskaya, Vitaliy Avrutin, Ümit Özgür, and Hadis Morkoç "Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630J (13 March 2015); https://doi.org/10.1117/12.2076207
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Cited by 3 scholarly publications.
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KEYWORDS
Lab on a chip

Excitons

Luminescence

Gallium nitride

Quantum wells

Polarization

Silicon

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