Paper
27 December 2002 Partitioning of Photomask Processes for Defects: II.
Author Affiliations +
Abstract
Reticle defects are one leading source of yield loss. This paper is a continuation of work begun to track defect sources to the process steps that generate them. Prior work was done on a common electron beam resist. This study will examine a DUV optical chemically amplified resist.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles H. Howard and Matthew J. Lamantia "Partitioning of Photomask Processes for Defects: II.", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467855
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KEYWORDS
Inspection

Etching

Photomasks

Reticles

Deep ultraviolet

Plasma etching

Chemically amplified resists

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