Development of 193-nm B.A.R.C.s for dual damascene applications

Hengpeng Wu; Zhong Xiang; Eleazar Gonzalez; Jianhui Shan; Shuji Ding; Wen-Bing Kang; Aritaka Hishida

doi:10.1117/12.474188

24 July 2002 Development of 193-nm B.A.R.C.s for dual damascene applications

Hengpeng Wu, Zhong Xiang, Eleazar Gonzalez, Jianhui Shan, Shuji Ding, Wen-Bing Kang, Aritaka Hishida

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474188
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Full and/or partial filling of 193 nm antireflective materials in contact holes is required for dual damascene applications. One of the major challenges for via filling is to minimize various fill bias associated with via size, via pitches and wafer size to an acceptable level. Toward this aim, various formulations were prepared and tested on different types of wafers using different processing conditions. It has been found that both the properties of the filling materials (e.g., molecular weights, glass transition temperatures, etc.) and processing conditions (e.g., spinning speed, dispense modes, baking temperatures, etc.) affect the filling behaviors. This paper presents our recent progress in the development of 193 nm B.A.R.C. materials designed for the dual damascene process. Through screening of the B.A.R.C. materials and optimization of the processing parameters, we have successfully developed two types of B.A.R.C. materials, namely, AZ EXP ArF-2P1 and AZ EXP ArF-2P5A, both of which show good filling performance.

Citation Download Citation

Hengpeng Wu, Zhong Xiang, Eleazar Gonzalez, Jianhui Shan, Shuji Ding, Wen-Bing Kang, and Aritaka Hishida "Development of 193-nm B.A.R.C.s for dual damascene applications", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474188

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