Irradiation of silicon with relativistic electron beams by Monte Carlo many-body interaction model of radiation damage

Zurab B. Basheleishvili; Alexander I. Melker; Sergei N. Romanov

doi:10.1117/12.456264

18 February 2002 Irradiation of silicon with relativistic electron beams by Monte Carlo many-body interaction model of radiation damage

Zurab B. Basheleishvili, Alexander I. Melker, Sergei N. Romanov

Author Affiliations +

Proceedings Volume 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2002) https://doi.org/10.1117/12.456264
Event: Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2001, St. Petersburg, Russian Federation

Abstract

In this contribution the Monte Carlo method is used to compute the distributions of vacancies with depth in silicon irradiated by relativistic electron beams. The model of N- body interactions in a collision cascade that advances in isotropic continuum was incorporated into the Monte Carlo scheme of successive collisions to obtain depth distributions of vacancies, interstitial atoms, and vacancy clusters produced by 1 - 10 MeV electrons in silicon. The model developed permits to obtain the statistically averaged space distributions of defects and thermal spikes. Besides the model explains the yield of clusters during sputtering. Defects formed by (delta) -electrons and primary knock-in atoms are also taken into account.

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Zurab B. Basheleishvili, Alexander I. Melker, and Sergei N. Romanov "Irradiation of silicon with relativistic electron beams by Monte Carlo many-body interaction model of radiation damage", Proc. SPIE 4627, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (18 February 2002); https://doi.org/10.1117/12.456264

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