Performance of JBX-9000MV with negative-tone resist for 130-nm reticle

Naoki Takahashi; Masayoshi Tsuzuki; Jun Kotani; Jun Yoshida; Yuji Kodaira; Yuko Oi; Yoshiro Yamada; Yuichi Matsuzawa

doi:10.1117/12.410702

22 January 2001 Performance of JBX-9000MV with negative-tone resist for 130-nm reticle

Naoki Takahashi, Masayoshi Tsuzuki, Jun Kotani, Jun Yoshida, Yuji Kodaira, Yuko Oi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410702
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

Improvement of Critical Dimension (CD) accuracy is one ofthe most important issues for high-end reticle fabrication. Two major obstacles remain even after careftil CD optimization efforts. One is foggy effect, which is related to writing system, and the other is loading effect, which is related to dry etching mechanism. Both of two are strongly related to pattern layout and major causes to degrade CD uniformity and mean to target. To solve those problems, we have tried to apply foggy effect correction software tool on the JBX-9000MV developed by JEOL. At this time, we used Chemically Amplified (CA) negative tone resist with optimized process condition and exposure parameter such as Proximity Effect Correction (PEC). After careful examination, we confirmed that the software could eliminate CD error caused by foggy effect. Further, by optimizing foggy effect correction, we were quite successful to compensate CD error caused by loading effect too. In this way, we established high-end (l3Onm design rule) reticle production technique.

Citation Download Citation

Naoki Takahashi, Masayoshi Tsuzuki, Jun Kotani, Jun Yoshida, Yuji Kodaira, Yuko Oi, Yoshiro Yamada, and Yuichi Matsuzawa "Performance of JBX-9000MV with negative-tone resist for 130-nm reticle", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410702

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