Analysis of photomask distortion caused by blank materials and open ratios

Seong-Yong Moon; Won-Tai Ki; Seung-Hune Yang; Tae Moon Jeong; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn

doi:10.1117/12.410697

22 January 2001 Analysis of photomask distortion caused by blank materials and open ratios

Seong-Yong Moon, Won-Tai Ki, Seung-Hune Yang, Tae Moon Jeong, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn

Proceedings Volume 4186, 20th Annual BACUS Symposium on Photomask Technology; (2001) https://doi.org/10.1117/12.410697
Event: Photomask Technology, 2000, Monterey, CA, United States

Abstract

As optical lithography error budgets on pattern displacement become more and more stringent for features as small as <180 nm, overlay control will be one of the top challenges facing lithography in the future. However, mask induced error budgets are less considered than uniformity of a mask. In this paper, we demonstrate a pattern displacement caused by stress induced distortion, in-plane distortion(IPD) values of chrome-on-glass (COG) and phase-shift-mask (PSM) blanks, and overlay errors. The magnification after AR/Cr layer removal for a COG is 0.37 ppm, which corresponds to an IPD of 33 nm across 100 x 100 mm2 area. The IPD for PSM corresponds to 43 nm across 100 x 100 mm2 area with 0.48 ppm. The IPD for PSM increases dramatically with increasing open ratios, while that for COG only slightly increases. It is found that mix-match between steppers and scanners should be avoided as long as COG mask and PSM are mixed because errors such as skew and scan direction magnification are uncorrectable with steppers.

Citation Download Citation

Seong-Yong Moon, Won-Tai Ki, Seung-Hune Yang, Tae Moon Jeong, Seong-Woon Choi, Woo-Sung Han, and Jung-Min Sohn "Analysis of photomask distortion caused by blank materials and open ratios", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410697

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