Process scheme for removing buffer layer on multilayer for EUVL mask

Eiichi Hoshino; Taro Ogawa; Masashi Takahashi; Hiromasa Hoko; Hiromasa Yamanashi; Naoya Hirano; Akira Chiba; Masaaki Ito; Shinji Okazaki

doi:10.1117/12.392050

19 July 2000 Process scheme for removing buffer layer on multilayer for EUVL mask

Eiichi Hoshino, Taro Ogawa, Masashi Takahashi, Hiromasa Hoko, Hiromasa Yamanashi, Naoya Hirano, Akira Chiba, Masaaki Ito, Shinji Okazaki

Author Affiliations +

Proceedings Volume 4066, Photomask and Next-Generation Lithography Mask Technology VII; (2000) https://doi.org/10.1117/12.392050
Event: Photomask and Next Generation Lithography Mask Technology VII, 2000, Kanagawa, Japan

Abstract

In the fabrication of masks for EUVL, a combination of dry and wet etching was used to remove the SiO₂ buffer layer. This technique greatly improves the pattern quality, yielding re-entrant shaped mask patterns with a steep SiO₂ sidewall. Under proper conditions, etching results in the base of the sidewall being recessed around 5 nm from the edge of the Ta pattern. The strength of hydrofluoric acid (HF) solution was set to 3.3 percent to allow good control of the etching rate. A combination of dry and wet etching is an effective way to remove the SiO₂ buffer layer because it can compensate for a variation of as much as 7.6 percent in the thickness of the SiO₂ film before etching.

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Eiichi Hoshino, Taro Ogawa, Masashi Takahashi, Hiromasa Hoko, Hiromasa Yamanashi, Naoya Hirano, Akira Chiba, Masaaki Ito, and Shinji Okazaki "Process scheme for removing buffer layer on multilayer for EUVL mask", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392050

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