Patterning 220-nm pitch DRAM patterns by using double mask exposure

Dongseok Nam; Nakgeuon Seong; Hanku Cho; Joo-Tae Moon; Sangin Lee

doi:10.1117/12.389017

5 July 2000 Patterning 220-nm pitch DRAM patterns by using double mask exposure

Dongseok Nam, Nakgeuon Seong, Hanku Cho, Joo-Tae Moon, Sangin Lee

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389017
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The acceleration of the design rule shrinkage and delayed ArF technology currently put pressure upon KrF technology for device development difficulties, so that the extension of KrF lithography to 220nm pitch patterning is under test carefully without using ArF technology.

Citation Download Citation

Dongseok Nam, Nakgeuon Seong, Hanku Cho, Joo-Tae Moon, and Sangin Lee "Patterning 220-nm pitch DRAM patterns by using double mask exposure", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389017

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