AMD's advanced process control of poly-gate critical dimension

Anthony J. Toprac

doi:10.1117/12.361324

3 September 1999 AMD's advanced process control of poly-gate critical dimension

Anthony J. Toprac

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361324
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

Formation of the MOS-FET polysilicon gate structure is a critical step in integrated circuit manufacturing. Control of poly-gate Critical Dimension (CD's) greatly affects revenue from microprocessor production. Poly-gate CD's correlate strongly to speed. As a result, variation in CD control causes unsaleable slow parts, high revenue fast parts, or scrapped high leakage product from overly fast parts. Controlling to the optimal value CD value, however, it is a difficult task due to the continual drift and step changes that occur in the photolithography and etch tools. As a result of this need, AMD's Fab 25 developed an automated run-to-run controller of poly-gate CD's as part of an Advanced Process Control (APC) initiative. From the perspective of both control and manufacturability, Fab 25's Run-to-Run controller of poly-gate Critical Dimension (CD) has been a critical enabler of our success in manufacturing the K6 product. This paper discusses the architecture, algorithm and results of the poly-gate CD control system.

Citation Download Citation

Anthony J. Toprac "AMD's advanced process control of poly-gate critical dimension", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361324

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