Paper
27 April 1999 Impact of built-in film thickness measurement in CMP process
Hiroyuki Yano, Katsuya Okumura, Noriyuki Kondo, Masahiro Horie
Author Affiliations +
Abstract
CMP is now the planarization method of choice in semiconductor manufacturing. However, CMP is still an immature process. Problems still exist with the uniformity and the stability of the CMP rate. These process variations stem from an incomplete understanding of the mechanism of CMP and the variation of CMP consumable s like slurry, pad and backing film. To compensate for these variations, send- ahead processing and too many measurements are usually required. Obviously, these affect CMP productivity. For better CMP productivity and accurate film thickness control, in-process monitoring is a promising solution. In this paper, a CMP tool with built-in thickness measurement is presented. Such a built-in CMP film thickness monitor must satisfy several requirements: 1) the measurements need to be made at specified chips in the wafer and at specified sites in the chip, 2) the measurements should be accurate, 3) multiple film stack measurements must be possible and 4) high-speed measurements must be possible. These four issues of the built-in film thickness monitor are discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Yano, Katsuya Okumura, Noriyuki Kondo, and Masahiro Horie "Impact of built-in film thickness measurement in CMP process", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346938
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Chemical mechanical planarization

Semiconducting wafers

Oxides

Tin

Water

Polishing

Refractive index

RELATED CONTENT


Back to Top