Galvanomagnetic properties of heterophase materials at high pressure

Vladimir V. Shchennikov; Svetlana V. Popova; Sergey V. Ovsyannikov

doi:10.1117/12.347409

5 May 1999 Galvanomagnetic properties of heterophase materials at high pressure

Vladimir V. Shchennikov, Svetlana V. Popova, Sergey V. Ovsyannikov

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347409
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

Magnetoresistance (MR) measurements are known to be used for the determination of electron density and mobility in bulk semiconductors and also in a wide variety of multi-layers fabricated devices. By use of the synthetic diamond plungers MR of high pressure phases have been measured for Mercury, Cadmium and Zinc Chalcogenides etc. up to 30 GPa. At pressure- induced phase transformations in some materials (HgSe, HgTe, HgO, CdTe) the inversions of MR sign were observed due to electron structure reconstruction and changing the electron scattering mechanisms. In the vicinity of the phase boundary MR effect was sufficient to the content of phase inclusions, so HgSe, HgCdSe and HgSeS crystals had unusual electrical and galvanomagnetic properties at high pressures. The aim of the present paper is to investigate the influence of phase inclusions on the Hall effect, MR, value of resistivity (rho) and its temperature dependence.

Citation Download Citation

Vladimir V. Shchennikov, Svetlana V. Popova, and Sergey V. Ovsyannikov "Galvanomagnetic properties of heterophase materials at high pressure", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347409

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