Magnetoresistance of heterophase materials at high pressures

Vladimir V. Shchennikov

doi:10.1117/12.324352

3 September 1998 Magnetoresistance of heterophase materials at high pressures

Vladimir V. Shchennikov

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324352
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

The influence of Metal (M) and Semiconductor (SC) inclusions on magnetoresistance (MR), Hall effect R and temperature dependence of resistivity (rho) (T) of heterophase materials is investigated for a case, when the signs of magnetoresistance effects for these phases are opposite. According to model used the relative position of signs inversion borders for MR and temperature coefficient of (rho) (T) in coordinates resistivity - phase concentration ought to be independent on configuration of inclusions. For HgSe_1-xS_x crystals in the vicinity of pressure- induced structural phase transition the result of calculations coincide with the experimented data of MR and (rho) (T).

Citation Download Citation

Vladimir V. Shchennikov "Magnetoresistance of heterophase materials at high pressures", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324352

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