Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography

Takeshi Okino; Koji Asakawa; Naomi Shida; Tohru Ushirogouchi

doi:10.1117/12.350242

11 June 1999 Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography

Takeshi Okino, Koji Asakawa, Naomi Shida, Tohru Ushirogouchi

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350242
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The resist comprising naphthalene rings instead of benzene rings was developed for ArF excimer laser lithography. Naphthalene shows outstanding dry etch resistance, stronger adhesion to silicon surface and low hydrophobicity compared with most alicyclic compounds. Di-tert-butyl 2-[(1- adamanthyl) carbonylmethyl] (ADTB) was developed as an additive to improve the characteristics of development of base polymer. Although ADTB has tert-butyl protective groups, the decomposition temperature is low compared with that of polymer which has a tert-butyl protective group. Moreover, the dry etch resistance of the resist becomes greater as ADTB content increases. 0.133 micrometers L/S patterns were fabricated using Nikon's ArF prototype exposure system. Next, in order to improve the adhesion of the resist having the alicyclic frame, introduction of naphthalene in to the resist was attempted. The new resists which has naphthalene frame showed stronger adhesion and 0.15 micrometers L/S patterns were fabricated using the ArF exposure system with the standard developer.

Citation Download Citation

Takeshi Okino, Koji Asakawa, Naomi Shida, and Tohru Ushirogouchi "Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350242

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