Photolithography expert system for improved estimation of IC critical area

Mark P.C. Chia; Gerard A. Allan; Anthony J. Walton

doi:10.1117/12.324394

28 August 1998 Photolithography expert system for improved estimation of IC critical area

Mark P.C. Chia, Gerard A. Allan, Anthony J. Walton

Proceedings Volume 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV; (1998) https://doi.org/10.1117/12.324394
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

In the manufacturing of IC the yield of the process is an important factor in estimating the cost. The calculation of critical area plays a key role in helping to determine the expected yield. This paper will demonstrate the use of a system, that will evolve into an expert system which can estimate the affects of photolithography on critical area. The system transforms critical area curves generated from the mask layout to more realistic curves related to the pattern on the wafer. It has been observed that this gives improved critical area estimates.

Citation Download Citation

Mark P.C. Chia, Gerard A. Allan, and Anthony J. Walton "Photolithography expert system for improved estimation of IC critical area", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); https://doi.org/10.1117/12.324394

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