The study of phase-angle and transmission specifications of 6% att-EAPSM for 90nm, 65nm, and 45nm node wafer manufacturing patterning process

Gong Chen; Cesar Garza D.D.S.

doi:10.1117/12.740717

16 November 2007 The study of phase-angle and transmission specifications of 6% att-EAPSM for 90nm, 65nm, and 45nm node wafer manufacturing patterning process

Gong Chen, Cesar Garza D.D.S.

Author Affiliations +

Proceedings Volume 6730, Photomask Technology 2007; 67302R (2007) https://doi.org/10.1117/12.740717
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

6% attenuated embedded PSM (att-EAPSM) has been widely used in semiconductor wafer manufacturing industry at 130nm, 90nm, 65nm and 45nm nodes. To effectively use the 6% att-EAPSM photomask technology and reduce its manufacturing costs, it is important for the industry to develop a comprehensive mask specification that can fully meet the wafer level lithography requirements without over-constraining the control parameters in 6% att-EAPSM manufacturing process. In this paper, we used computer simulation software, Prolith by KLA-Tencor to study the impact of local phase-angle and transmission errors to wafer lithography process. The simulation results indicated that phase-angle and transmission errors result in a best focus plane shift, and hence reduce the common focus exposure window across the mask. The data also indicated that as the NA (numerical aperture) of the lithography system increases, the same amount of phase-angle error results less amount of focus shift. Based on this study and the practical common focus windows in semiconductor industry, we proposed a new phase-angle and transmission specification of 6% att-EAPSM for 90nm, 65nm and 45nm node wafer process.

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Gong Chen and Cesar Garza D.D.S. "The study of phase-angle and transmission specifications of 6% att-EAPSM for 90nm, 65nm, and 45nm node wafer manufacturing patterning process", Proc. SPIE 6730, Photomask Technology 2007, 67302R (16 November 2007); https://doi.org/10.1117/12.740717

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