Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design

Hiroshi Fukuda; Keiko T. Hattori

doi:10.1117/12.310745

29 June 1998 Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design

Hiroshi Fukuda, Keiko T. Hattori

Author Affiliations +

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310745
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The aberration in optics and acid diffusion in resist films have a great influence on proximity effects in optical lithography. Our analysis clarified that (1) a local (random) pupil-phase variation (higher-order aberration) degrades imaging performance under highly coherent illumination often used with periodic phase-shifting masks, and (2) in some positive-tone chemically amplified resists, the non-Fickean diffusion process changes effective image distributions, depending on the patterns features and mask tonality. Although the latter has a potential to achieve high resolution capability for isolated bright features, these effects generally pronounce proximity effects and make their correction difficult. Simple modeling of these effects and their simulation implementation are also discussed.

Citation Download Citation

Hiroshi Fukuda and Keiko T. Hattori "Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310745

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