Lithographic and chemical contrast of single component top surface imaging (TSI) resists

John F. Bohland; Janet Chambers; Siddhartha Das; Theodore H. Fedynyshyn; Susan M. Holl; John M. Hutchinson; Veena Rao; Roger F. Sinta

doi:10.1117/12.312375

29 June 1998 Lithographic and chemical contrast of single-component top-surface imaging (TSI) resists

John F. Bohland, Janet Chambers, Siddhartha Das, Theodore H. Fedynyshyn, Susan M. Holl, John M. Hutchinson, Veena Rao, Roger F. Sinta

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312375
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A variety of different approaches were used in an effort to improve the photospeeds of single component TSI resists based on poly(4-hydroxystyrene). The variations included molecular weights, co-monomer partners, and selected substituents. The factors that were studied dramatically affected silylation rates, in one case by as much as an order of magnitude. However, when the silylation times were adjusted to compensate for the rate differences and silylation depths, only minimal differences in photospeed were observed. The apparent contrast measured by swelling upon silylation was very poor ((gamma) equals 1.5) while the contrast measured after etching was quite high, approximately ten times that of the silylation value.

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John F. Bohland, Janet Chambers, Siddhartha Das, Theodore H. Fedynyshyn, Susan M. Holl, John M. Hutchinson, Veena Rao, and Roger F. Sinta "Lithographic and chemical contrast of single-component top-surface imaging (TSI) resists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312375

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