Polysilyne resists for 193 nm excimer laser lithography

Roderick R. Kunz; Patricia Anne Bianconi; Mark W. Horn; R. R. Paladugu; David C. Shaver; David Alastair M Smith; Charles A. Freed

doi:10.1117/12.46373

1 June 1991 Polysilyne resists for 193 nm excimer laser lithography

Roderick R. Kunz, Patricia Anne Bianconi, Mark W. Horn, R. R. Paladugu, David C. Shaver, David Alastair M Smith, Charles A. Freed

Author Affiliations +

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46373
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Polyalkylsilynes have been used as resists for 193-nm projection lithography. These resists can be either wet developed using toluene or dry developed using HBr reactive ion etching (RIE). Wet development relies on crosslinking via intermolecular Si-O-Si bond formation to reduce solubility (negative tone) whereas the dry development relies on photo-oxidation to induce etch selectivity (also negative tone). The sensitivity in either case ranges from 20 to 200 mJ/cm2 and depends on the resist formulation. The best resist compositions are those that contain predominantly small (n-butyl) aliphatic pendant groups rather than large (cyclohexyl, phenyl) pendant groups. Using a 0.33 NA catadioptric lens with a phase mask, equal line-and-space features as small as 0.15 micrometers have been printed and transferred through 1.0 micrometers of planarizing layer (aspect ratio > 6) using oxygen RIE.

Citation Download Citation

Roderick R. Kunz, Patricia Anne Bianconi, Mark W. Horn, R. R. Paladugu, David C. Shaver, David Alastair M Smith, and Charles A. Freed "Polysilyne resists for 193 nm excimer laser lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46373

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