Paper
14 November 1997 1.55-μm laser diodes with leaky waveguide structure
Jingchang Zhong, Yingjie Zhao, Ronghui Li
Author Affiliations +
Proceedings Volume 3241, Smart Materials, Structures, and Integrated Systems; (1997) https://doi.org/10.1117/12.293482
Event: Far East and Pacific Rim Symposium on Smart Materials, Structures, and MEMS, 1997, Adelaide, Australia
Abstract
We have satisfactorily designed and prepared a gain-guided high-power 1.55 micrometer leaky waveguide semiconductor laser structure on the basis of considering the laser loss mechanisms such as auger electron recombination, carrier leakage over the heterobarrier, inter-valence-band absorption, etc. It was grown by a unique liquid phase epitaxy (LPE) and was modified by growing an intrinsic InGaAsP waveguiding layer between the active layer and lower confinement layer and provided a higher temperature stability than that of conventional lasers. Using the leaky waveguide structure, we have obtained 1.55 micrometer laser diodes with threshold currents comparable to common lasers (Jthe less than or equal to 2.5 KA/cm2) but with the characteristic temperature TO near to those of GaAs-AlGaAs lasers (142 K). Especially, we have obtained the peak output power up to higher than 2 W per facet in pulsed operation at room temperature.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingchang Zhong, Yingjie Zhao, and Ronghui Li "1.55-μm laser diodes with leaky waveguide structure", Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); https://doi.org/10.1117/12.293482
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KEYWORDS
Semiconductor lasers

Waveguide lasers

Laser damage threshold

Waveguides

Absorption

Pulsed laser operation

Liquid phase epitaxy

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