Paper
28 April 1995 High-power long-wavelength large optical cavity (LOC) laser diodes
Ronghui Li, Jingchang Zhong, Baoren Zhu, Yingjie Zhao, Yi Qu
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Abstract
A gain-guided high-power 1.55 micrometers large optical cavity (LOC) laser structure was successfully prepared based on considerations of laser loss mechanisms such as auger electron recombination, carrier leakage over the heterobarrier, inter-valence-band absorption and so forth. The structure was grown by a unique liquid phase epitaxy (LPE) and was modified by growing an intrinsic InGaAsP waveguiding layer which replaced its n-type counterpart as in usual LOC devices and provided a higher temperature stability than that of conventional DH lasers. Using the LOC structure, we have obtained 1.55 micrometers laser diodes with threshold currents comparable to commercial lasers (Jth < 2.7 KA/cm2) but with the characteristic temperature To near to those of GaAs-AlGaAs lasers (140 K). Especially, we have attained the peak output power up to higher than 2 W per facet in pulsed operation at room temperature.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronghui Li, Jingchang Zhong, Baoren Zhu, Yingjie Zhao, and Yi Qu "High-power long-wavelength large optical cavity (LOC) laser diodes", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208450
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KEYWORDS
Lab on a chip

Semiconductor lasers

Laser damage threshold

Pulsed laser operation

Optical resonators

Absorption

Laser stabilization

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