Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization

Hua-Yu Liu; Linard Karklin; Yao-Ting Wang; Yagyensh C. Pati

doi:10.1117/12.301204

12 February 1997 Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization

Hua-Yu Liu, Linard Karklin, Yao-Ting Wang, Yagyensh C. Pati

Author Affiliations +

Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.301204
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

In this paper we show that the problem of intrafield line width variations can be effectively solved through a novel application of alternating phase-shifting mask (PSM) technology. To illustrate its advantages, we applied this approach to produce 140 nm transistor gates using DUV (248 nm wavelength, KrF) lithography. We show that: systematic intrafield line width variations can be controlled to within 10 nm (3 (sigma) ), and variations across the wafer held to within 15 nm (3 (sigma) ), with a target k₁ factor of K₁ equals 0.237 (140 nm target gate lengths).

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Hua-Yu Liu, Linard Karklin, Yao-Ting Wang, and Yagyensh C. Pati "Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301204

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