Paper
5 July 2000 Manufacturability of 248-nm phase-shift lithography for 100-nm transistors
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Abstract
The timing of 193nm tools and the resist to support them is driving semiconductor manufacturers to plan for production of sub-half lambda features on 248nm exposure tools. Lithographers are turning to reticle enhancements to close the capability gap, finding that there are a myriad of issues that must be addressed to achieve production- worthiness.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark E. Mason, John N. Randall, and Keeho Kim "Manufacturability of 248-nm phase-shift lithography for 100-nm transistors", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.388971
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KEYWORDS
Photomasks

Reticles

Semiconducting wafers

Binary data

Lithography

Phase shifts

Manufacturing

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