Real-time control of etching processes: experimental results

Jordan M. Berg; Ted K. Higman; Allen R. Tannenbaum

doi:10.1117/12.284645

25 August 1997 Real-time control of etching processes: experimental results

Jordan M. Berg, Ted K. Higman, Allen R. Tannenbaum

Proceedings Volume 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III; (1997) https://doi.org/10.1117/12.284645
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

A unified approach to the modeling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modeling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of in/out data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.

Citation Download Citation

Jordan M. Berg, Ted K. Higman, and Allen R. Tannenbaum "Real-time control of etching processes: experimental results", Proc. SPIE 3213, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing III, (25 August 1997); https://doi.org/10.1117/12.284645

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