Instantaneous etch rate measurement of thin transparent films by interferometry for use in an algorithm to control a plasma etcher

Helen L. Mishurda; Noah Hershkowitz

doi:10.1117/12.48961

1 March 1991 Instantaneous etch rate measurement of thin transparent films by interferometry for use in an algorithm to control a plasma etcher

Helen L. Mishurda, Noah Hershkowitz

Author Affiliations +

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48961
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

A goal of our Engineering Research Center for Plasma Aided Manufacturing is to develop a feedback system to control a plasma etcher. Our system etches 1 micron thermally grown SiO2 layers using gas mixtures of CFJCHF/Og. Thin-film interferometry is conventionally used to measure an average etch rate each interlerometric fringe signals a change in film depth of X/2n. Our method determines the instantaneous etch rate using data from the interlerometer. The instantaneous etch rate will be used as feedback in a scheme to control the etch process by regulating the power and gas flow into the etcher. Results will be presented showing interferometric traces and analysis of the data The status of the feedback effort will also be presented.

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Helen L. Mishurda and Noah Hershkowitz "Instantaneous etch rate measurement of thin transparent films by interferometry for use in an algorithm to control a plasma etcher", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48961

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