Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias

Menachem Genut; Ofer Tehar-Zahav; Eli Iskevitch; Boris Livshits

doi:10.1117/12.275872

7 July 1997 Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias

Menachem Genut, Ofer Tehar-Zahav, Eli Iskevitch, Boris Livshits

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275872
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

Removal of tough compounds, which are formed during reactive ion etch (RIE) of polysilicon, contacts and vias, is one of the challenges in deep submicron patterned photoresist stripping. A novel UV-excimer laser photoresist stripping method proposed here allows the removal of these hard and mainly inorganic species, usually situated on sidewalls, in one dry step.

Citation Download Citation

Menachem Genut, Ofer Tehar-Zahav, Eli Iskevitch, and Boris Livshits "Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275872

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