Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing

Xuejin Yan; Rong Han Wu; Qiming Wang

doi:10.1117/12.251903

24 September 1996 Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing

Xuejin Yan, Rong Han Wu, Qiming Wang

Author Affiliations +

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251903
Event: Photonics China '96, 1996, Beijing, China

Abstract

The influence of rapid thermal annealing (RTA) on the doping profile and the structure of quantum well LD have been investigated by means of Hall measurement, Auger Electron Spectroscopy, and Secondary Ion Mass Spectroscopy methods after certain RTA. It has been discovered that high resistivity layer was formed at the ohmic contact layer after RTA. However, the structure of quantum well LD is not influenced by RTA.

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Xuejin Yan, Rong Han Wu, and Qiming Wang "Experimental investigation of the doping profile and structure of InGaAsP/InP multiple quantum wells after rapid thermal annealing", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251903

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