Photoreflectance Study of Ion-implanted CdTe

P. M. Amirtharaj; R. C. Bowman Jr.; R. L. Alt

doi:10.1117/12.947413

9 August 1988 Photoreflectance Study of Ion-implanted CdTe

P. M. Amirtharaj, R. C. Bowman Jr., R. L. Alt

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947413
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have used the contactless and nondestructive technique of photoreflectance (PR) to study boron-ion implanted {100} CdTe both before and after annealing. The samples studied were implanted using 100 to 400 keV boron ions to a dosage of 1x10¹⁶/cm² and some were annealed in vacuum at 500C for 1 hour. The spectral measurements made at 77K in the vicinity of the direct gap, Eo, indicate three dominant phases with distinctly different line widths that may originate in a nearly crystalline, partially crystalline and heavily damaged regions in the sample. A study of the E1 spectra and the changes in the line shapes in the vicinity of E_o with varying the pump penetration depth from ~2500A using the 6328A He-Ne laser line to <400A using a near-ultra violet.beam yields some insight into the depth distribution and volume fraction of the three phases.

Citation Download Citation

P. M. Amirtharaj, R. C. Bowman Jr., and R. L. Alt "Photoreflectance Study of Ion-implanted CdTe", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947413

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