Mark topography for alignment and registration in projection electron lithography

Reginald C. Farrow; Masis M. Mkrtchyan; Kevin Bolen; Myrtle I. Blakey; Christopher J. Biddick; Linus A. Fetter; Harold A. Huggins; Regine G. Tarascon-Auriol; Steven D. Berger

doi:10.1117/12.240464

27 May 1996 Mark topography for alignment and registration in projection electron lithography

Reginald C. Farrow, Masis M. Mkrtchyan, Kevin Bolen, Myrtle I. Blakey, Christopher J. Biddick, Linus A. Fetter, Harold A. Huggins, Regine G. Tarascon-Auriol, Steven D. Berger

Author Affiliations +

Proceedings Volume 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI; (1996) https://doi.org/10.1117/12.240464
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

We have studied two mark geometries for possible use in a projection e-beam lithography system using SCALPEL (scattering with angular limitation in projection electron lithography). These are V-grooves and vertically etched geometries, pedestals or trenches. We report results of measurements of backscattered electron (BSE) contrast form topographic marks of varying size and as a function of energy up to 100 kV. The marks were fabricated on silicon wafers. The measurements were taken both in a scanning electron microscope and in an experimental SCALPEL machine operating in focused probe mode. The V-grooves ranged from 1.0 to 30 micrometers wide. The vertical etched features ranged from 2 to 30 micrometers wide and 0.6 and 50 micrometers depth. The results depended not only on the feature width and depth, but also on whether the features were isolated or in line and space patterns. Using a BSE ratio of 1.05 as a criterion for acceptable contrast from an alignment mark, V-grooves and vertical etched features had acceptable contrast with exception of the smallest and shallowest features for both geometries.

Citation Download Citation

Reginald C. Farrow, Masis M. Mkrtchyan, Kevin Bolen, Myrtle I. Blakey, Christopher J. Biddick, Linus A. Fetter, Harold A. Huggins, Regine G. Tarascon-Auriol, and Steven D. Berger "Mark topography for alignment and registration in projection electron lithography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240464

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available