Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants

Martin Duncan; P. Pansana

doi:10.1117/12.221126

15 September 1995 Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants

Martin Duncan, P. Pansana

Author Affiliations +

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221126
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

In order to satisfy the twin requirements of increased performance at low cost, a novel architecture that allows the differentiation of the source and drain implants of an EPROM cell without any additional processing steps has been developed. This cell is more immune to electrical stress than a standard cell during both programming and read cycles. In addition, this cell is inherently electrically shorter and therefore can be used to reduce die size in advanced EPROM devices.

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Martin Duncan and P. Pansana "Optimizing the performance of advanced nonvolatile memories using differentiated cell source and drain implants", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221126

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