Application of RTA to a 0.8-um BiCMOS process

Robert H. Reuss

doi:10.1117/12.167345

15 February 1994 Application of RTA to a 0.8-μm BiCMOS process

Robert H. Reuss

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167345
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

RTA has been established as a key process element in a sub-micron BiCMOS flow. The major advantage of RTA is that a temperature pulse > 1000 degree(s)C can be used to break-up the interfacial oxide in the polysilicon emitter contact to provide enhanced current gain with low-emitter resistance but with little impact on the CMOS. The RTA emitter anneal also serves to simultaneously flow BPSG to planarize the wafer prior to metallization. Contact reflow is also advantageous for a tapered structure to improve metal step-coverage.

Citation Download Citation

Robert H. Reuss "Application of RTA to a 0.8-μm BiCMOS process", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167345

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