Paper
9 June 1995 Investigation into the origin of microbridging in chemically amplified negative-tone photoresists
Leo L. Linehan, Randolph S. Smith, Judy Dorn, James T. Fahey, Wayne M. Moreau, Gary T. Spinillo, Erik A. Puttlitz, James P. Collins
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Abstract
Microbridge formation in a CAMN photoresist we have developed is dependent on the ratio of dose to print (DTP) to dose to gel (DTG) as well as resist contrast. Photoresists formulated with poly(p-hydroxystyrene) (PHS) have a very high tendency to form microbridges when developed in 2.38 wt% TMAH due to high contrast and high DTP/DTG ratio. When photoresists formulated from PHS were developed in 1.2 wt% TMAH contrast and DTP/DTG ratio were reduced resulting in microbridging being nearly eliminated. Using this observation we developed an I-line CAMN photoresist with PHS type thermal stability and high resolution capabilities which can be developed in industry standard 2.38 wt% TMAH.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leo L. Linehan, Randolph S. Smith, Judy Dorn, James T. Fahey, Wayne M. Moreau, Gary T. Spinillo, Erik A. Puttlitz, and James P. Collins "Investigation into the origin of microbridging in chemically amplified negative-tone photoresists", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210418
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Cited by 3 scholarly publications.
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KEYWORDS
Photoresist materials

Photoresist developing

Standards development

Lithography

Deep ultraviolet

Image quality

Microelectronics

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