Reliability of photospeed and related measures of resist performances

Karin R. Schlicht; Patricia Scialdone; Peggy M. Spragg; Steven G. Hansen; Rodney J. Hurditch; Medhat A. Toukhy; David J. Brzozowy

doi:10.1117/12.175375

16 May 1994 Reliability of photospeed and related measures of resist performances

Karin R. Schlicht, Patricia Scialdone, Peggy M. Spragg, Steven G. Hansen, Rodney J. Hurditch, Medhat A. Toukhy, David J. Brzozowy

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175375
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Photospeed measures of functional performance are widely employed for the characterization, quality control, and quality assurance of photoresists in both their manufacture and end use. In this paper we investigate from both a theoretical and experimental stand point, the precision and reliability of these measures for positive photoresists, and explore the relationships with dissolution rate behavior as determined by DRM. In particular we quantify their dependence upon photolithographic process and resist compositional variants. It is demonstrated that for a given photoresist a 'single point' measure of photospeed may not be predictive of the observed lithographic 'sizing' behavior. Multiple point measurements, which more reliably predict the lithographic process window, are proposed and evaluated for advanced g- and i-line resists. Included amongst these are measures based on the determination of E₀ at different develop times.

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Karin R. Schlicht, Patricia Scialdone, Peggy M. Spragg, Steven G. Hansen, Rodney J. Hurditch, Medhat A. Toukhy, and David J. Brzozowy "Reliability of photospeed and related measures of resist performances", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175375

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