Photolithographic evaluation of various photoresist materials for mask-making applications

Birender Singh; Warren Montgomery

doi:10.1117/12.436883

24 August 2001 Photolithographic evaluation of various photoresist materials for mask-making applications

Birender Singh, Warren Montgomery

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436883
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

This paper describes studies of various resists from multiple photoresist manufacturers. The main criteria used to select an appropriate resist candidate were iso/dense bias and critical dimension (CD) uniformity. Data has shown that processes commonly used in the industry are sensitive to loading. Etec Systems, Inc. continues to look for photoresist(s) that can mitigate the CD variation caused by this effect. The data presented in this paper shows that resist selection is key to iso/dense bias reduction. Data is presented from both an ALTA 3700 exposure tool and an i-line stepper system, and a correlation is drawn between these exposure systems. Various developer processes are discussed, ranging from puddle to immersion development.

Citation Download Citation

Birender Singh and Warren Montgomery "Photolithographic evaluation of various photoresist materials for mask-making applications", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436883

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