Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module

A. M. Bayoumi; J. Montgomery; R. T. Kuehn; F. S. Johnson; John R. Hauser

doi:10.1117/12.167369

15 February 1994 Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module

A. M. Bayoumi, J. Montgomery, R. T. Kuehn, F. S. Johnson, John R. Hauser

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167369
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Low thermal budget deposition of thin MOS gate stacks has been performed using a cluster tool rapid thermal processing module. This paper introduces the operational characteristics of the module, and the deposition conditions for gate oxide, nitride, and poly, in addition to spacer oxides. The different processing sequences for gate stacks are described, and finally the electrical characterization results of both rapid thermal chemical vapor deposition and conventional thermal MOS devices are compared.

Citation Download Citation

A. M. Bayoumi, J. Montgomery, R. T. Kuehn, F. S. Johnson, and John R. Hauser "Low-thermal-budget MOS gate stack formation using a cluster tool rapid-thermal-processing module", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167369

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