Paper
15 February 1994 Emissivity compensated radiance-contrast-tracking pyrometry for semiconductor processing
Michael E. Adel, Shmuel Mangan, Yaron Ish-Shalom
Author Affiliations +
Abstract
In this paper an analysis technique is presented which allows the achievable performance specifications for a single wavelength pyrometer to be calculated. The effects of pyrometer wavelength, wafer emissivity, background radiation and detector noise limitations are all taken into account in the modelling. It is demonstrated that in order to maintain a given precision the wavelength of the pyrometer must be progressively reduced in order to maintain radiance contrast as the wafer temperature rises. The analysis technique is also shown to be an effective design tool for determining the required electronic and optical performance specifications of the pyrometer in order to obtain a given temperature measurement precision.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael E. Adel, Shmuel Mangan, and Yaron Ish-Shalom "Emissivity compensated radiance-contrast-tracking pyrometry for semiconductor processing", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167353
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KEYWORDS
Semiconducting wafers

Pyrometry

Temperature metrology

Error analysis

Wafer-level optics

Semiconductor manufacturing

Sensors

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