Processing techniques for improving performance of positive-tone silylation

Edward K. Pavelchek; Gary S. Calabrese; Bruce W. Dudley; Susan K. Jones; Peter W. Freeman; John F. Bohland; Roger F. Sinta

doi:10.1117/12.154760

15 September 1993 Processing techniques for improving performance of positive-tone silylation

Edward K. Pavelchek, Gary S. Calabrese, Bruce W. Dudley, Susan K. Jones, Peter W. Freeman, John F. Bohland, Roger F. Sinta

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154760
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Many approaches to surface imaging rely upon selective incorporation of silicon into an already imaged resist layer. SAHR^TM (silylated acid hardened resist) obtains its selectivity by a lower rate of silicon incorporation into exposed and crosslinked areas, providing a positive tone image after RIE development. Two difficulties with the practical implementation of this approach have been the overflow of silylated material onto crosslinked areas, and reduced silicon incorporation in small openings. We have found that surface treatment with a bifunctional silylation agent (the `two gas process') can prevent overflow, and that removing part of the resist layer with dilute tetramethyl ammonium hydroxide (TMAH) (the `presilylation develop process') minimizes overflow and improves silicon incorporation in small features. With a predevelop step, feature size linearity is obtained below k1 equals 0.7, with uniformity and repeatability consistent with VLSI manufacturing practices.

Citation Download Citation

Edward K. Pavelchek, Gary S. Calabrese, Bruce W. Dudley, Susan K. Jones, Peter W. Freeman, John F. Bohland, and Roger F. Sinta "Processing techniques for improving performance of positive-tone silylation", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154760

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