Double pre-wet RRC (reducing resist consumption) process for deep ultraviolet bottom antireflective coatings (BARC)

Xiao Li; Warren Greene; Chris Bowker

doi:10.1117/12.534150

14 May 2004 Double prewet RRC (reducing resist consumption) process for deep-ultraviolet bottom antireflective coatings (BARC)

Xiao Li, Warren Greene, Chris Bowker

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534150
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

RRC (Reducing Resist Consumption) process is widely used in the Semiconductor industry to decrease the cost of photo resist per wafer. However, the process is often accompanied with various coating defects that make it difficult to improve final yield and further reduce resist cost per wafer. Deep ultraviolet (DUV) bottom anti-reflective coating is critical to critical dimension (CD) control and is used for most critical layers like Poly, STI and Contact layers. This paper will present a novel double pre-wet RRC process to reduce both coating defects and resist consumption of BARC. The relationship between resist consumption per coating and thickness uniformity (mean and range) of the new process was evaluated. The stability test results of the new process shows acceptable manufacturing results. Coating defects from double pre-wet RRC process were analyzed and compared with the normal coating process without RRC. The effect of DUV BARC coating performed by the double pre-wet RRC process on critical dimension (CD) performance of Island, Poly and Contact layer was also reported.

Citation Download Citation

Xiao Li, Warren Greene, and Chris Bowker "Double prewet RRC (reducing resist consumption) process for deep-ultraviolet bottom antireflective coatings (BARC)", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534150

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