Fabrication processes for GaAs-based high-power diode lasers

Kathleen Meehan; Linda S. Heath; Jeannie E. Williams; Tien Yang Wang; Dana M. Beyea; Aland K. Chin; Wolfgang Stutius

doi:10.1117/12.147595

24 June 1993 Fabrication processes for GaAs-based high-power diode lasers

Kathleen Meehan, Linda S. Heath, Jeannie E. Williams, Tien Yang Wang, Dana M. Beyea, Aland K. Chin, Wolfgang Stutius

Proceedings Volume 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices; (1993) https://doi.org/10.1117/12.147595
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

GaAs-based, edge-emitting diode lasers have become important light sources for numerous applications, e.g., in ophthalmology and dentistry, pumping of solid-state lasers, and printing on thermal media. The general performance requirements for these devices are high brightness, high reliability, stable optical-characteristics, and low system-cost to performance ratio. Device processing procedures such as dry etching, anodic oxidation, anti-reflection coatings, ion-implantation, and epitaxial growth on non-planar substrates impact the operation of the laser, both positively as well as negatively. The effect of these fabrication procedures on device reliability is discussed where applicable.

Citation Download Citation

Kathleen Meehan, Linda S. Heath, Jeannie E. Williams, Tien Yang Wang, Dana M. Beyea, Aland K. Chin, and Wolfgang Stutius "Fabrication processes for GaAs-based high-power diode lasers", Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); https://doi.org/10.1117/12.147595

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